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10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE

10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE
10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE
10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE
10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE
10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE
10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE
10Pcs 2N5551 BJT Bipolar Single Transistor, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE

Product Specifications:

  • The 2N5551 from Fairchild is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
  • Collector to emitter breakdown voltage of 160V. DC collector current of 600mA
  • Collector to emitter saturation voltage of 200mV at 50mA collector current. DC current gain of 30 at Ic=50mA
  • Power dissipation of 625mW. Operating junction temperature range from -55°C to 150°C
  • Package Include: 10 x 2N5551

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