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10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
10Pcs 2N7000 MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

Product Specifications:

he 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance.

It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate

Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 1.2ohm

Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.1V; Power Dissipation Pd: 400mW

Package Include: 10 x 2N7000A


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