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10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE

10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE
10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE
10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE
10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE
10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE
10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE
10Pcs MJE13003 Bipolar (BJT) 13003 Transistor, NPN, 400 V, 10 MHz, 1.4 W, 1.5 A, 4 hFE

Product Specifications:

  • These devices are designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits.
  • Reverse Biased SOA with Inductive Loads @ TC = 100C; 700 V Blocking Capability.
  • Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100C tc @ 1 A, 100C is 290 ns (Typ)
  • Collector Emitter Voltage V(br) ceo: 400V; Transition Frequency ft: 10MHz; Power Dissipation Pd: 1.4W; DC Collector Current: 1.5A; DC Current Gain hFE: 4hFE.
  • Package Include 10 x MJE13003

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