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10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE

10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE
10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE
10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE
10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE
10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE
10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE
10Pcs 2N3906 BJT Bipolar Single Transistor, High Speed Switching, PNP, -40 V, 250 MHz, 625 mW, 200 mA, 100 hFE

Product Specifications:

  • Current - Collector (Ic) (Max):200mA; Voltage - Collector Emitter Breakdown (Max):40V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA; DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 1V
  • Power - Max:600mW; Frequency - Transition:250MHz
  • Operating Temperature:-55°C ~ 150°C (TJ); Mounting Type:Through Hole
  • Package Include: 10 x 2N3906

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